Zhangjicai

1.    Yuxiang Song, Hanjunyi Wu, Xiangtian He, Chunlei Fang, Qian Song, Minghao Chen, Zerui Liu, Yong Lu, Bingran Yu, Ting Liu*, Jicai Zhang*, Fu-jian Xu*,Triboelectric Nanogenerator Made with Stretchable, Antibacterial Hydrogel Electrodes for Biomechanical Sensing, ACS Applied Materials & Interfaces, Accepted.

2.    Zerui Liu, Yulin Zhang, Feng-ning Xue, Ting Liu, Xiaokang Ding, Yong Lu,* Ji-cai Zhang,* and Fu-Jian Xu*, High-Performance W‑Doped Bi0.5Sb1.5Te3 Flexible Thermoelectric Films and Generators, ACS Applied Materials & Interfaces, 16, 26025-26033 (2024).

3.    Ting Liu, Chunlei Fang, Maosong Sun, Minghao Chen, Jianli Ji, Zhijie Shen, Yong Lu, Shuxin Tan*, and Jicai Zhang*, 2-inch semi-polar (112-2) AlN templates prepared by high-temperature hydride vapor phase epitaxy, CrystEngComm, 26,3383 (2024).

4.    Minghao Chen, Chunlei Fang, Qian Zhang, Zhijie Shen, Jianli Ji, Shuxin Tan, Yong Lu, Ting Liu*, and Jicai Zhang*, Influence of pressure on AlN thick films prepared by epitaxial lateral overgrowth through hydride vapor phase epitaxy,CrystEngComm 26, 1565-1570 (2024).

5.    Jianli Ji, Ting Liu*, Zhuokun He, Chunlei Fang, Xuejun Yan, Minghao Chen, Zhijie Shen, Maosong Sun, Jicai Zhang*, and Wenhong Sun*, Semipolar (11–22) AlN Films Grown by Hydride Vapor Phase Epitaxy for Schottky Barrier Diodes,Cryst. Growth Des. 24 (9), 3960-3966 (2024).

6.    Mengdi Li, Yuqing Sun, Yang Cheng, Chaowei Zhao*, Jicai Zhang*, and Weiwei Li*, Vanadyl Sulfate Based Hole -Transporting Layer Enables Efficient Organic Solar Cells,Chin. J. Chem. 42, 1644-1650 (2024).

7.    Ting Liu, Zhijie Shen, Minghao Chen, Qian Zhang, Maosong Sun, Chunlei Fang, Yong Lu, Hai Hu, Shuxin Tan,* and Jicai Zhang*, Morphology Evolution of a h‑BN Film Grown by Halide Vapor Phase Epitaxy at Different Growth Temperatures, Cryst. Growth Des.24 (2), 810-816 (2024).

8.    Xuejun Yan, Maosong Sun, Jianli Ji, Zhuokun He, Jicai Zhang*, and Wenhong Sun*，Epitaxy of (11–22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy, Materials, 17(2), 327 (2024).

9.    Liu Ting, Qian Zhang, Xu Li, Minghao Chen, Chunhua Du, Maosong Sun, Jia Wang, Shuxin Tan* and Jicai Zhang*, Fabrication of a freestanding AlN substrate via HVPE homoepitaxy on a PVT-AlN substrate, Semicond. Sci. Technol. 39, 015010 (2024).

10.Xu Li, ALMazroi Salwa, Ting Liu, Yong Lu and Ji-Cai Zhang*, Formation mechanism of (10-13) AlN twins on m-plane sapphire substrates at high temperature by hydride vapor phase epitaxy, CrystEngComm 25(39),5560-5564 (2023).

11.Mengdi Li, Yuefeng Zhang, Dongdong Xia, Jie Fang, Qian Xie, Yanxun Li, Chaowei Zhao,* Chengyi Xiao, Shengyong You, Jicai Zhang,* Lang Jiang, Alex K.-Y. Jen,* and Weiwei Li*, Simple and Low-Cost Vanadyl Oxalate as Hole Transporting Layer Enables Efficient Organic Solar Cells, Adv. Funct. Mater. 2309244 (2023).

12.Zerui Liu, Yulin Zhang, Yuxiang Song, Yong Lu, Ting Liu *and Jicai Zhang *, A wearable 3D pressure sensor based on electrostatic self-assembly MXene/chitosan sponge and insulating PVP spacer, Nanotechnology 34, 455502(2023).

13.Minghao Chen, Qian Zhang, Chunlei Fang, Zhijie Shen, Yong Lu, Ting Liu *, Shuxin Tan * and Jicai Zhang *, Influence of sapphire substrate with miscut angles on hexagonal boron nitride films grown by halide vapor phase epitaxy, CrystEngComm 25, 4604 (2023).

14.Di Fan, Feng-ning Xue, Zhi-hao Zhao, Ting Liu, Yong Lu*, Ji-cai Zhang*, The adsorption and diffusion behaviors of nitrogen impurities in ℎ-BN by first-principles study, Materials Science in Semiconductor Processing 154,107175 (2023).

15.Chengshuo Shang, Xiangtian He, Xiaodi Li, Zerui Liu, Yuxiang Song, Yulin Zhang, Xu Li, Yong Lu, Xiaokang Ding, Ting Liu*, Jicai Zhang*, and Fu-Jian Xu *, One 3D Aerogel Wearable Pressure Sensor with Ultrahigh Sensitivity, Wide Working Range, Low Detection Limit for Voice Recognition and Physiological Signals Monitoring, Sci China Mater 66(5) 1911–1922 (2023).

16.Maosong Sun, Ting Liu*, Yong Lu, Shuxin Tan, Xu Li, Jicai Zhang*, and Wenhong Sun*, Influence of Growth Temperature and Miscut Angle of m-Plane Sapphire Substrate on the Semi-polar (11-22) AlN Film Grown by HVPE, Frontiers in Physics, 10, 1076895 (2022).

17.Zhi-hao Zhao, Feng-ning Xue, Peng-bo Zhao, Yong Lu,* and Ji-cai Zhang*,Theoretical study of potential n-type and p-type dopants in GaN from data mining and first-principles calculation, Semicond. Sci. Technol. 37, 085004 (2022).

18.Feng-ning Xue, Zhi-hao Zhao, Yujuan Zhang, Ting Liu, Yong Lu*, and Ji-cai Zhang*，Layer-dependent electronic structure, dynamic stability, and phonon properties of few-layer SnSe，Phys.Rev.B, 106, 104301 (2022).

19.Ting Liu, Xu Li, Jianyun Zhao, Qian Zhang, Yong Lu, Ji Xu*, Shuxin Tan*,and Jicai Zhang*,  Hexagonal boron nitride film on sapphire substrate grown by low-pressure and high-temperature halide vapor phase epitaxy,J.Cryst.Growth, 588, 126655 (2022).

20.Yang Yue, Maosong Sun, Jie Chen, Xuejun Yan, Zhuokun He, Jicai Zhang*, Wenhong Sun*, Improvement of Crystal Quality of AlN Films with Different Polarities by Annealing at High Temperature, Micromachines 13, 129 (2022).

21.Qian Zhang†, Xu Li†, Jianyun Zhao, Zhifei Sun, Yong Lu, Ting Liu*, and Jicai Zhang*, Effect of high-temperature nitridation and buffer layer on semi-polar (10-13) AlN grown on sapphire by HVPE,Micromachines 12, 1153 (2021).

22.Xiaodi Li, Xu Li, Ting liu, Yong Lu, Chengshuo Shang, Xiaokang Ding, Jicai Zhang,* Yongjun Feng,* and Fu-Jian Xu*, Wearable, Washable, and Highly Sensitive Piezoresistive Pressure Sensor Based on a 3D Sponge Network for Real-Time Monitoring Human Body Activities, ACS Applied Materials & Interfaces, 13(39), 46848–46857(2021).

23.Yang Yue, Maosong Sun, Xu Li, Ting Liu, Yong Lu, Jie Chen, Yi Peng, Mudassar Maraj, Jicai Zhang*, Wenhong Sun*，Quality improvement mechanism of sputtered AlN films on sapphire substrates with high-miscut-angles along different directions, CrystEngComm, 23, 6871–6878 (2021).

24.Feng-ning Xue, Mao-song Sun, Xiao-yue Feng, Yong Lu*, and Ji-cai Zhang*, Electronic structure, dynamic stability, elastic and optical properties of MgTMN2 (TM=Ti,Zr,Hf) ternary nitrides from first-principles calculation, Journal of Applied Physics, 129(13), 135103 (2021).

25.Jianyun Zhao, Xu Li, Ting Liu, Yong Lu*, and Jicai Zhang*，First-principles study of the growth and diffusion of B and N atoms on the sapphire surface with h-BN as the buffer layer，Journal of Semiconductors, 42, 082801 (2021).