北京化工大学张纪才个人主页-教授-数理学院

论文信息

[+][-]代表性论文

1. DOI Fan, Di,薛峰宁,赵智豪,Liu, Ting,鲁勇,张纪才
The adsorption and diffusion behaviors of nitrogen impurities in h-BN by first-principles study[期刊论文]，Materials Science in Semiconductor Processing，2023-02-01
2. DOI 尚成硕,何翔天,李晓迪,Liu, Zerui,Song, Yuxiang,张玉林,李旭,鲁勇,丁小康,刘婷,张纪才,徐福建
One 3D aerogel wearable pressure sensor with ultrahigh sensitivity, wide working range, low detection limit for voice recognition and physiological signal monitoring[期刊论文]，Science China Materials，2023-01-01
3. DOI Maosong, Sun,刘婷,鲁勇,Shuxin, Tan,李旭,张纪才,Wenhong, Sun
Influence of growth temperature and miscut angle of m-plane sapphire substrate on the semi-polar (11-22) AIN film grown by HVPE[期刊论文]，FRONTIERS IN PHYSICS，2022-11-23
4. DOI Zhang, Qian,Sun, Maosong,Yao, Mengqi,Zhu, Jie,Yang, Sudong,Chen, Lin,Sun, Baolong,张纪才,Hu, Wencheng,Zhao, Peng
Interfacial engineering of an FeOOH@Co3O4 heterojunction for efficient overall water splitting and electrocatalytic urea oxidation[期刊论文]，Journal of Colloid and Interface Science，2022-10-01
5. DOI 薛峰宁,赵智豪,Zhang, Yujuan,刘婷,鲁勇,张纪才
Layer-dependent electronic structure, dynamic stability, and phonon properties of few-layer SnSe[期刊论文]，Physical Review B，2022-09-01
6. DOI 赵智豪,薛峰宁,Zhao, Peng-Bo,鲁勇,张纪才
Theoretical study of potential n-type and p-type dopants in GaN from data mining and first-principles calculation[期刊论文]，Semiconductor Science and Technology，2022-08-01
7. DOI Yuefeng Zhang,Mengdi Li,Jie Fang,Dongdong Xia,Shengyong You,Chaowei Zhao,张纪才,李韦伟
Organic-Inorganic Hybrid Cathode Interlayer Materials for Efficient Organic Solar Cells[期刊论文]，Sustainable Energy & Fuels，2022-07-26
8. DOI 张骞,李旭,赵建昀,Sun, Zhifei,鲁勇,刘婷,张纪才
Effect of high-temperature nitridation and buffer layer on semi-polar (10–13) ALN grown on sapphire by HVPE[期刊论文]，Micromachines，2021-10-01
9. DOI 薛峰宁,Sun, Mao-song,Feng, Xiao-yue,鲁勇,张纪才
Electronic structure, dynamic stability, elastic, and optical properties of MgTMN2 (TM=Ti, Zr, Hf) ternary nitrides from first-principles calculations[期刊论文]，JOURNAL OF APPLIED PHYSICS，2021-04-07
10. DOI 李旭,赵建昀,刘婷,鲁勇,张纪才
Growth of Semi-Polar (10(1)over-bar3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE[期刊论文]，MATERIALS，2021-04-01
11. DOI 赵建昀,李旭,刘婷,鲁勇,张纪才
First-principles study of the growth and diffusion of B and N atoms on the sapphire surface with h-BN as the buffer layer[期刊论文]，JOURNAL OF SEMICONDUCTORS，2021-03-27
12. DOI Li, Jinfeng,Li, Xu,鲁勇,Hu, Weiguo,张纪才
Effect of oxygen plasma modification on Pd/Al/Au Ohmic contacts on undoped AlN[期刊论文]，JOURNAL OF PHYSICS D-APPLIED PHYSICS，2019-12-11
13. DOI 孙茂松,李金峰,张纪才,孙文红
The fabrication of AlN by hydride vapor phase epitaxy[期刊论文]，Journal of Semiconductors，2019-11-24
14. DOI Cheng, Likun,Meng, Junhua,Pan, Xiaojun,鲁勇,Zhang, Xingwang,Gao, Menglei,Yin, Zhigang,Wang, Denggui,Wang, Ye,You, Jingbi,张纪才,Xie, Erqing
Two-dimensional hexagonal boron-carbon-nitrogen atomic layers[期刊论文]，NANOSCALE，2019-06-07
15. DOI Sha, Wei,张纪才,Tan, Shuxin,Luo, Xiangdong,Hu, Weiguo
III-nitride piezotronic/piezo-phototronic materials and devices[期刊论文]，JOURNAL OF PHYSICS D-APPLIED PHYSICS，2019-05-22
16. DOI Wang, Denggui,鲁勇,Meng, Junhua,Zhang, Xingwang,Yin, Zhigang,Gao, Menglei,Wang, Ye,Cheng, Likun,You, Jingbi,张纪才
Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride[期刊论文]，NANOSCALE，2019-05-21
17. DOI Hou, Ruixiang,Li, Lei,Fang, Xin,Zhao, Hui,Chen, Yihang,Xie, Ziang,Sun, Guosheng,Zhang, Xinhe,Zhao, Yanfei,Huang, Rong,Huang, Zengli,He, Youqin,Ma, Nongnong,张纪才,Xu, Wanjing,Yang, Jinbo,Xiao, Chijie,Qin, G. G.
Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion[期刊论文]，JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE，2019-01-01
18. DOI Tan, Shuxin,Deng, Xuguang,Zhang, Boshun,张纪才
Thermal stability of F ion-implant isolated AlGaN/GaN heterostructures[期刊论文]，SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY，2018-12-01
19. DOI Tan, Shuxin,张纪才,Egawa, Takashi,Chen, Gang
Influence of Quantum-Well Number and an AlN Electron Blocking Layer on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes[期刊论文]，APPLIED SCIENCES-BASEL，2018-12-01
20. DOI Tan, Shuxin,张纪才,Egawa, Takashi,Chen, Gang,Luo, Xiangdong,Sun, Ling,Zhu, Youhua
Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures[期刊论文]，NANOSCALE RESEARCH LETTERS，2018-10-23

[+][-] 2024年

1. DOI Fan, Di,薛峰宁,赵智豪,Liu, Ting,鲁勇,张纪才
The adsorption and diffusion behaviors of nitrogen impurities in h-BN by first-principles study[期刊论文]，Materials Science in Semiconductor Processing，2023-02-01
2. DOI 尚成硕,何翔天,李晓迪,Liu, Zerui,Song, Yuxiang,张玉林,李旭,鲁勇,丁小康,刘婷,张纪才,徐福建
One 3D aerogel wearable pressure sensor with ultrahigh sensitivity, wide working range, low detection limit for voice recognition and physiological signal monitoring[期刊论文]，Science China Materials，2023-01-01
3. DOI Maosong, Sun,刘婷,鲁勇,Shuxin, Tan,李旭,张纪才,Wenhong, Sun
Influence of growth temperature and miscut angle of m-plane sapphire substrate on the semi-polar (11-22) AIN film grown by HVPE[期刊论文]，FRONTIERS IN PHYSICS，2022-11-23
4. DOI Zhang, Qian,Sun, Maosong,Yao, Mengqi,Zhu, Jie,Yang, Sudong,Chen, Lin,Sun, Baolong,张纪才,Hu, Wencheng,Zhao, Peng
Interfacial engineering of an FeOOH@Co3O4 heterojunction for efficient overall water splitting and electrocatalytic urea oxidation[期刊论文]，Journal of Colloid and Interface Science，2022-10-01
5. DOI 薛峰宁,赵智豪,Zhang, Yujuan,刘婷,鲁勇,张纪才
Layer-dependent electronic structure, dynamic stability, and phonon properties of few-layer SnSe[期刊论文]，Physical Review B，2022-09-01
6. DOI 赵智豪,薛峰宁,Zhao, Peng-Bo,鲁勇,张纪才
Theoretical study of potential n-type and p-type dopants in GaN from data mining and first-principles calculation[期刊论文]，Semiconductor Science and Technology，2022-08-01
7. DOI Yuefeng Zhang,Mengdi Li,Jie Fang,Dongdong Xia,Shengyong You,Chaowei Zhao,张纪才,李韦伟
Organic-Inorganic Hybrid Cathode Interlayer Materials for Efficient Organic Solar Cells[期刊论文]，Sustainable Energy & Fuels，2022-07-26
8. DOI 张骞,李旭,赵建昀,Sun, Zhifei,鲁勇,刘婷,张纪才
Effect of high-temperature nitridation and buffer layer on semi-polar (10–13) ALN grown on sapphire by HVPE[期刊论文]，Micromachines，2021-10-01
9. DOI 薛峰宁,Sun, Mao-song,Feng, Xiao-yue,鲁勇,张纪才
Electronic structure, dynamic stability, elastic, and optical properties of MgTMN2 (TM=Ti, Zr, Hf) ternary nitrides from first-principles calculations[期刊论文]，JOURNAL OF APPLIED PHYSICS，2021-04-07
10. DOI 李旭,赵建昀,刘婷,鲁勇,张纪才
Growth of Semi-Polar (10(1)over-bar3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE[期刊论文]，MATERIALS，2021-04-01
11. DOI 赵建昀,李旭,刘婷,鲁勇,张纪才
First-principles study of the growth and diffusion of B and N atoms on the sapphire surface with h-BN as the buffer layer[期刊论文]，JOURNAL OF SEMICONDUCTORS，2021-03-27
12. DOI Li, Jinfeng,Li, Xu,鲁勇,Hu, Weiguo,张纪才
Effect of oxygen plasma modification on Pd/Al/Au Ohmic contacts on undoped AlN[期刊论文]，JOURNAL OF PHYSICS D-APPLIED PHYSICS，2019-12-11
13. DOI 孙茂松,李金峰,张纪才,孙文红
The fabrication of AlN by hydride vapor phase epitaxy[期刊论文]，Journal of Semiconductors，2019-11-24
14. DOI Cheng, Likun,Meng, Junhua,Pan, Xiaojun,鲁勇,Zhang, Xingwang,Gao, Menglei,Yin, Zhigang,Wang, Denggui,Wang, Ye,You, Jingbi,张纪才,Xie, Erqing
Two-dimensional hexagonal boron-carbon-nitrogen atomic layers[期刊论文]，NANOSCALE，2019-06-07
15. DOI Sha, Wei,张纪才,Tan, Shuxin,Luo, Xiangdong,Hu, Weiguo
III-nitride piezotronic/piezo-phototronic materials and devices[期刊论文]，JOURNAL OF PHYSICS D-APPLIED PHYSICS，2019-05-22
16. DOI Wang, Denggui,鲁勇,Meng, Junhua,Zhang, Xingwang,Yin, Zhigang,Gao, Menglei,Wang, Ye,Cheng, Likun,You, Jingbi,张纪才
Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride[期刊论文]，NANOSCALE，2019-05-21
17. DOI Hou, Ruixiang,Li, Lei,Fang, Xin,Zhao, Hui,Chen, Yihang,Xie, Ziang,Sun, Guosheng,Zhang, Xinhe,Zhao, Yanfei,Huang, Rong,Huang, Zengli,He, Youqin,Ma, Nongnong,张纪才,Xu, Wanjing,Yang, Jinbo,Xiao, Chijie,Qin, G. G.
Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion[期刊论文]，JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE，2019-01-01
18. DOI Tan, Shuxin,Deng, Xuguang,Zhang, Boshun,张纪才
Thermal stability of F ion-implant isolated AlGaN/GaN heterostructures[期刊论文]，SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY，2018-12-01
19. DOI Tan, Shuxin,张纪才,Egawa, Takashi,Chen, Gang
Influence of Quantum-Well Number and an AlN Electron Blocking Layer on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes[期刊论文]，APPLIED SCIENCES-BASEL，2018-12-01
20. DOI Tan, Shuxin,张纪才,Egawa, Takashi,Chen, Gang,Luo, Xiangdong,Sun, Ling,Zhu, Youhua
Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures[期刊论文]，NANOSCALE RESEARCH LETTERS，2018-10-23

[+][-] 2023年

1. DOI Fan, Di,薛峰宁,赵智豪,Liu, Ting,鲁勇,张纪才
The adsorption and diffusion behaviors of nitrogen impurities in h-BN by first-principles study[期刊论文]，Materials Science in Semiconductor Processing，2023-02-01
2. DOI 尚成硕,何翔天,李晓迪,Liu, Zerui,Song, Yuxiang,张玉林,李旭,鲁勇,丁小康,刘婷,张纪才,徐福建
One 3D aerogel wearable pressure sensor with ultrahigh sensitivity, wide working range, low detection limit for voice recognition and physiological signal monitoring[期刊论文]，Science China Materials，2023-01-01
3. DOI Maosong, Sun,刘婷,鲁勇,Shuxin, Tan,李旭,张纪才,Wenhong, Sun
Influence of growth temperature and miscut angle of m-plane sapphire substrate on the semi-polar (11-22) AIN film grown by HVPE[期刊论文]，FRONTIERS IN PHYSICS，2022-11-23
4. DOI Zhang, Qian,Sun, Maosong,Yao, Mengqi,Zhu, Jie,Yang, Sudong,Chen, Lin,Sun, Baolong,张纪才,Hu, Wencheng,Zhao, Peng
Interfacial engineering of an FeOOH@Co3O4 heterojunction for efficient overall water splitting and electrocatalytic urea oxidation[期刊论文]，Journal of Colloid and Interface Science，2022-10-01
5. DOI 薛峰宁,赵智豪,Zhang, Yujuan,刘婷,鲁勇,张纪才
Layer-dependent electronic structure, dynamic stability, and phonon properties of few-layer SnSe[期刊论文]，Physical Review B，2022-09-01
6. DOI 赵智豪,薛峰宁,Zhao, Peng-Bo,鲁勇,张纪才
Theoretical study of potential n-type and p-type dopants in GaN from data mining and first-principles calculation[期刊论文]，Semiconductor Science and Technology，2022-08-01
7. DOI Yuefeng Zhang,Mengdi Li,Jie Fang,Dongdong Xia,Shengyong You,Chaowei Zhao,张纪才,李韦伟
Organic-Inorganic Hybrid Cathode Interlayer Materials for Efficient Organic Solar Cells[期刊论文]，Sustainable Energy & Fuels，2022-07-26
8. DOI 张骞,李旭,赵建昀,Sun, Zhifei,鲁勇,刘婷,张纪才
Effect of high-temperature nitridation and buffer layer on semi-polar (10–13) ALN grown on sapphire by HVPE[期刊论文]，Micromachines，2021-10-01
9. DOI 薛峰宁,Sun, Mao-song,Feng, Xiao-yue,鲁勇,张纪才
Electronic structure, dynamic stability, elastic, and optical properties of MgTMN2 (TM=Ti, Zr, Hf) ternary nitrides from first-principles calculations[期刊论文]，JOURNAL OF APPLIED PHYSICS，2021-04-07
10. DOI 李旭,赵建昀,刘婷,鲁勇,张纪才
Growth of Semi-Polar (10(1)over-bar3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE[期刊论文]，MATERIALS，2021-04-01
11. DOI 赵建昀,李旭,刘婷,鲁勇,张纪才
First-principles study of the growth and diffusion of B and N atoms on the sapphire surface with h-BN as the buffer layer[期刊论文]，JOURNAL OF SEMICONDUCTORS，2021-03-27
12. DOI Li, Jinfeng,Li, Xu,鲁勇,Hu, Weiguo,张纪才
Effect of oxygen plasma modification on Pd/Al/Au Ohmic contacts on undoped AlN[期刊论文]，JOURNAL OF PHYSICS D-APPLIED PHYSICS，2019-12-11
13. DOI 孙茂松,李金峰,张纪才,孙文红
The fabrication of AlN by hydride vapor phase epitaxy[期刊论文]，Journal of Semiconductors，2019-11-24
14. DOI Cheng, Likun,Meng, Junhua,Pan, Xiaojun,鲁勇,Zhang, Xingwang,Gao, Menglei,Yin, Zhigang,Wang, Denggui,Wang, Ye,You, Jingbi,张纪才,Xie, Erqing
Two-dimensional hexagonal boron-carbon-nitrogen atomic layers[期刊论文]，NANOSCALE，2019-06-07
15. DOI Sha, Wei,张纪才,Tan, Shuxin,Luo, Xiangdong,Hu, Weiguo
III-nitride piezotronic/piezo-phototronic materials and devices[期刊论文]，JOURNAL OF PHYSICS D-APPLIED PHYSICS，2019-05-22
16. DOI Wang, Denggui,鲁勇,Meng, Junhua,Zhang, Xingwang,Yin, Zhigang,Gao, Menglei,Wang, Ye,Cheng, Likun,You, Jingbi,张纪才
Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride[期刊论文]，NANOSCALE，2019-05-21
17. DOI Hou, Ruixiang,Li, Lei,Fang, Xin,Zhao, Hui,Chen, Yihang,Xie, Ziang,Sun, Guosheng,Zhang, Xinhe,Zhao, Yanfei,Huang, Rong,Huang, Zengli,He, Youqin,Ma, Nongnong,张纪才,Xu, Wanjing,Yang, Jinbo,Xiao, Chijie,Qin, G. G.
Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion[期刊论文]，JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE，2019-01-01
18. DOI Tan, Shuxin,Deng, Xuguang,Zhang, Boshun,张纪才
Thermal stability of F ion-implant isolated AlGaN/GaN heterostructures[期刊论文]，SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY，2018-12-01
19. DOI Tan, Shuxin,张纪才,Egawa, Takashi,Chen, Gang
Influence of Quantum-Well Number and an AlN Electron Blocking Layer on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes[期刊论文]，APPLIED SCIENCES-BASEL，2018-12-01
20. DOI Tan, Shuxin,张纪才,Egawa, Takashi,Chen, Gang,Luo, Xiangdong,Sun, Ling,Zhu, Youhua
Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures[期刊论文]，NANOSCALE RESEARCH LETTERS，2018-10-23

[+][-]2022年

1. DOI Fan, Di,薛峰宁,赵智豪,Liu, Ting,鲁勇,张纪才
The adsorption and diffusion behaviors of nitrogen impurities in h-BN by first-principles study[期刊论文]，Materials Science in Semiconductor Processing，2023-02-01
2. DOI 尚成硕,何翔天,李晓迪,Liu, Zerui,Song, Yuxiang,张玉林,李旭,鲁勇,丁小康,刘婷,张纪才,徐福建
One 3D aerogel wearable pressure sensor with ultrahigh sensitivity, wide working range, low detection limit for voice recognition and physiological signal monitoring[期刊论文]，Science China Materials，2023-01-01
3. DOI Maosong, Sun,刘婷,鲁勇,Shuxin, Tan,李旭,张纪才,Wenhong, Sun
Influence of growth temperature and miscut angle of m-plane sapphire substrate on the semi-polar (11-22) AIN film grown by HVPE[期刊论文]，FRONTIERS IN PHYSICS，2022-11-23
4. DOI Zhang, Qian,Sun, Maosong,Yao, Mengqi,Zhu, Jie,Yang, Sudong,Chen, Lin,Sun, Baolong,张纪才,Hu, Wencheng,Zhao, Peng
Interfacial engineering of an FeOOH@Co3O4 heterojunction for efficient overall water splitting and electrocatalytic urea oxidation[期刊论文]，Journal of Colloid and Interface Science，2022-10-01
5. DOI 薛峰宁,赵智豪,Zhang, Yujuan,刘婷,鲁勇,张纪才
Layer-dependent electronic structure, dynamic stability, and phonon properties of few-layer SnSe[期刊论文]，Physical Review B，2022-09-01
6. DOI 赵智豪,薛峰宁,Zhao, Peng-Bo,鲁勇,张纪才
Theoretical study of potential n-type and p-type dopants in GaN from data mining and first-principles calculation[期刊论文]，Semiconductor Science and Technology，2022-08-01
7. DOI Yuefeng Zhang,Mengdi Li,Jie Fang,Dongdong Xia,Shengyong You,Chaowei Zhao,张纪才,李韦伟
Organic-Inorganic Hybrid Cathode Interlayer Materials for Efficient Organic Solar Cells[期刊论文]，Sustainable Energy & Fuels，2022-07-26
8. DOI 张骞,李旭,赵建昀,Sun, Zhifei,鲁勇,刘婷,张纪才
Effect of high-temperature nitridation and buffer layer on semi-polar (10–13) ALN grown on sapphire by HVPE[期刊论文]，Micromachines，2021-10-01
9. DOI 薛峰宁,Sun, Mao-song,Feng, Xiao-yue,鲁勇,张纪才
Electronic structure, dynamic stability, elastic, and optical properties of MgTMN2 (TM=Ti, Zr, Hf) ternary nitrides from first-principles calculations[期刊论文]，JOURNAL OF APPLIED PHYSICS，2021-04-07
10. DOI 李旭,赵建昀,刘婷,鲁勇,张纪才
Growth of Semi-Polar (10(1)over-bar3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE[期刊论文]，MATERIALS，2021-04-01
11. DOI 赵建昀,李旭,刘婷,鲁勇,张纪才
First-principles study of the growth and diffusion of B and N atoms on the sapphire surface with h-BN as the buffer layer[期刊论文]，JOURNAL OF SEMICONDUCTORS，2021-03-27
12. DOI Li, Jinfeng,Li, Xu,鲁勇,Hu, Weiguo,张纪才
Effect of oxygen plasma modification on Pd/Al/Au Ohmic contacts on undoped AlN[期刊论文]，JOURNAL OF PHYSICS D-APPLIED PHYSICS，2019-12-11
13. DOI 孙茂松,李金峰,张纪才,孙文红
The fabrication of AlN by hydride vapor phase epitaxy[期刊论文]，Journal of Semiconductors，2019-11-24
14. DOI Cheng, Likun,Meng, Junhua,Pan, Xiaojun,鲁勇,Zhang, Xingwang,Gao, Menglei,Yin, Zhigang,Wang, Denggui,Wang, Ye,You, Jingbi,张纪才,Xie, Erqing
Two-dimensional hexagonal boron-carbon-nitrogen atomic layers[期刊论文]，NANOSCALE，2019-06-07
15. DOI Sha, Wei,张纪才,Tan, Shuxin,Luo, Xiangdong,Hu, Weiguo
III-nitride piezotronic/piezo-phototronic materials and devices[期刊论文]，JOURNAL OF PHYSICS D-APPLIED PHYSICS，2019-05-22
16. DOI Wang, Denggui,鲁勇,Meng, Junhua,Zhang, Xingwang,Yin, Zhigang,Gao, Menglei,Wang, Ye,Cheng, Likun,You, Jingbi,张纪才
Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride[期刊论文]，NANOSCALE，2019-05-21
17. DOI Hou, Ruixiang,Li, Lei,Fang, Xin,Zhao, Hui,Chen, Yihang,Xie, Ziang,Sun, Guosheng,Zhang, Xinhe,Zhao, Yanfei,Huang, Rong,Huang, Zengli,He, Youqin,Ma, Nongnong,张纪才,Xu, Wanjing,Yang, Jinbo,Xiao, Chijie,Qin, G. G.
Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion[期刊论文]，JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE，2019-01-01
18. DOI Tan, Shuxin,Deng, Xuguang,Zhang, Boshun,张纪才
Thermal stability of F ion-implant isolated AlGaN/GaN heterostructures[期刊论文]，SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY，2018-12-01
19. DOI Tan, Shuxin,张纪才,Egawa, Takashi,Chen, Gang
Influence of Quantum-Well Number and an AlN Electron Blocking Layer on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes[期刊论文]，APPLIED SCIENCES-BASEL，2018-12-01
20. DOI Tan, Shuxin,张纪才,Egawa, Takashi,Chen, Gang,Luo, Xiangdong,Sun, Ling,Zhu, Youhua
Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures[期刊论文]，NANOSCALE RESEARCH LETTERS，2018-10-23

[+][-]2021年

1. DOI Fan, Di,薛峰宁,赵智豪,Liu, Ting,鲁勇,张纪才
The adsorption and diffusion behaviors of nitrogen impurities in h-BN by first-principles study[期刊论文]，Materials Science in Semiconductor Processing，2023-02-01
2. DOI 尚成硕,何翔天,李晓迪,Liu, Zerui,Song, Yuxiang,张玉林,李旭,鲁勇,丁小康,刘婷,张纪才,徐福建
One 3D aerogel wearable pressure sensor with ultrahigh sensitivity, wide working range, low detection limit for voice recognition and physiological signal monitoring[期刊论文]，Science China Materials，2023-01-01
3. DOI Maosong, Sun,刘婷,鲁勇,Shuxin, Tan,李旭,张纪才,Wenhong, Sun
Influence of growth temperature and miscut angle of m-plane sapphire substrate on the semi-polar (11-22) AIN film grown by HVPE[期刊论文]，FRONTIERS IN PHYSICS，2022-11-23
4. DOI Zhang, Qian,Sun, Maosong,Yao, Mengqi,Zhu, Jie,Yang, Sudong,Chen, Lin,Sun, Baolong,张纪才,Hu, Wencheng,Zhao, Peng
Interfacial engineering of an FeOOH@Co3O4 heterojunction for efficient overall water splitting and electrocatalytic urea oxidation[期刊论文]，Journal of Colloid and Interface Science，2022-10-01
5. DOI 薛峰宁,赵智豪,Zhang, Yujuan,刘婷,鲁勇,张纪才
Layer-dependent electronic structure, dynamic stability, and phonon properties of few-layer SnSe[期刊论文]，Physical Review B，2022-09-01
6. DOI 赵智豪,薛峰宁,Zhao, Peng-Bo,鲁勇,张纪才
Theoretical study of potential n-type and p-type dopants in GaN from data mining and first-principles calculation[期刊论文]，Semiconductor Science and Technology，2022-08-01
7. DOI Yuefeng Zhang,Mengdi Li,Jie Fang,Dongdong Xia,Shengyong You,Chaowei Zhao,张纪才,李韦伟
Organic-Inorganic Hybrid Cathode Interlayer Materials for Efficient Organic Solar Cells[期刊论文]，Sustainable Energy & Fuels，2022-07-26
8. DOI 张骞,李旭,赵建昀,Sun, Zhifei,鲁勇,刘婷,张纪才
Effect of high-temperature nitridation and buffer layer on semi-polar (10–13) ALN grown on sapphire by HVPE[期刊论文]，Micromachines，2021-10-01
9. DOI 薛峰宁,Sun, Mao-song,Feng, Xiao-yue,鲁勇,张纪才
Electronic structure, dynamic stability, elastic, and optical properties of MgTMN2 (TM=Ti, Zr, Hf) ternary nitrides from first-principles calculations[期刊论文]，JOURNAL OF APPLIED PHYSICS，2021-04-07
10. DOI 李旭,赵建昀,刘婷,鲁勇,张纪才
Growth of Semi-Polar (10(1)over-bar3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE[期刊论文]，MATERIALS，2021-04-01
11. DOI 赵建昀,李旭,刘婷,鲁勇,张纪才
First-principles study of the growth and diffusion of B and N atoms on the sapphire surface with h-BN as the buffer layer[期刊论文]，JOURNAL OF SEMICONDUCTORS，2021-03-27
12. DOI Li, Jinfeng,Li, Xu,鲁勇,Hu, Weiguo,张纪才
Effect of oxygen plasma modification on Pd/Al/Au Ohmic contacts on undoped AlN[期刊论文]，JOURNAL OF PHYSICS D-APPLIED PHYSICS，2019-12-11
13. DOI 孙茂松,李金峰,张纪才,孙文红
The fabrication of AlN by hydride vapor phase epitaxy[期刊论文]，Journal of Semiconductors，2019-11-24
14. DOI Cheng, Likun,Meng, Junhua,Pan, Xiaojun,鲁勇,Zhang, Xingwang,Gao, Menglei,Yin, Zhigang,Wang, Denggui,Wang, Ye,You, Jingbi,张纪才,Xie, Erqing
Two-dimensional hexagonal boron-carbon-nitrogen atomic layers[期刊论文]，NANOSCALE，2019-06-07
15. DOI Sha, Wei,张纪才,Tan, Shuxin,Luo, Xiangdong,Hu, Weiguo
III-nitride piezotronic/piezo-phototronic materials and devices[期刊论文]，JOURNAL OF PHYSICS D-APPLIED PHYSICS，2019-05-22
16. DOI Wang, Denggui,鲁勇,Meng, Junhua,Zhang, Xingwang,Yin, Zhigang,Gao, Menglei,Wang, Ye,Cheng, Likun,You, Jingbi,张纪才
Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride[期刊论文]，NANOSCALE，2019-05-21
17. DOI Hou, Ruixiang,Li, Lei,Fang, Xin,Zhao, Hui,Chen, Yihang,Xie, Ziang,Sun, Guosheng,Zhang, Xinhe,Zhao, Yanfei,Huang, Rong,Huang, Zengli,He, Youqin,Ma, Nongnong,张纪才,Xu, Wanjing,Yang, Jinbo,Xiao, Chijie,Qin, G. G.
Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion[期刊论文]，JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE，2019-01-01
18. DOI Tan, Shuxin,Deng, Xuguang,Zhang, Boshun,张纪才
Thermal stability of F ion-implant isolated AlGaN/GaN heterostructures[期刊论文]，SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY，2018-12-01
19. DOI Tan, Shuxin,张纪才,Egawa, Takashi,Chen, Gang
Influence of Quantum-Well Number and an AlN Electron Blocking Layer on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes[期刊论文]，APPLIED SCIENCES-BASEL，2018-12-01
20. DOI Tan, Shuxin,张纪才,Egawa, Takashi,Chen, Gang,Luo, Xiangdong,Sun, Ling,Zhu, Youhua
Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures[期刊论文]，NANOSCALE RESEARCH LETTERS，2018-10-23

[+][-]2020年

1. DOI Fan, Di,薛峰宁,赵智豪,Liu, Ting,鲁勇,张纪才
The adsorption and diffusion behaviors of nitrogen impurities in h-BN by first-principles study[期刊论文]，Materials Science in Semiconductor Processing，2023-02-01
2. DOI 尚成硕,何翔天,李晓迪,Liu, Zerui,Song, Yuxiang,张玉林,李旭,鲁勇,丁小康,刘婷,张纪才,徐福建
One 3D aerogel wearable pressure sensor with ultrahigh sensitivity, wide working range, low detection limit for voice recognition and physiological signal monitoring[期刊论文]，Science China Materials，2023-01-01
3. DOI Maosong, Sun,刘婷,鲁勇,Shuxin, Tan,李旭,张纪才,Wenhong, Sun
Influence of growth temperature and miscut angle of m-plane sapphire substrate on the semi-polar (11-22) AIN film grown by HVPE[期刊论文]，FRONTIERS IN PHYSICS，2022-11-23
4. DOI Zhang, Qian,Sun, Maosong,Yao, Mengqi,Zhu, Jie,Yang, Sudong,Chen, Lin,Sun, Baolong,张纪才,Hu, Wencheng,Zhao, Peng
Interfacial engineering of an FeOOH@Co3O4 heterojunction for efficient overall water splitting and electrocatalytic urea oxidation[期刊论文]，Journal of Colloid and Interface Science，2022-10-01
5. DOI 薛峰宁,赵智豪,Zhang, Yujuan,刘婷,鲁勇,张纪才
Layer-dependent electronic structure, dynamic stability, and phonon properties of few-layer SnSe[期刊论文]，Physical Review B，2022-09-01
6. DOI 赵智豪,薛峰宁,Zhao, Peng-Bo,鲁勇,张纪才
Theoretical study of potential n-type and p-type dopants in GaN from data mining and first-principles calculation[期刊论文]，Semiconductor Science and Technology，2022-08-01
7. DOI Yuefeng Zhang,Mengdi Li,Jie Fang,Dongdong Xia,Shengyong You,Chaowei Zhao,张纪才,李韦伟
Organic-Inorganic Hybrid Cathode Interlayer Materials for Efficient Organic Solar Cells[期刊论文]，Sustainable Energy & Fuels，2022-07-26
8. DOI 张骞,李旭,赵建昀,Sun, Zhifei,鲁勇,刘婷,张纪才
Effect of high-temperature nitridation and buffer layer on semi-polar (10–13) ALN grown on sapphire by HVPE[期刊论文]，Micromachines，2021-10-01
9. DOI 薛峰宁,Sun, Mao-song,Feng, Xiao-yue,鲁勇,张纪才
Electronic structure, dynamic stability, elastic, and optical properties of MgTMN2 (TM=Ti, Zr, Hf) ternary nitrides from first-principles calculations[期刊论文]，JOURNAL OF APPLIED PHYSICS，2021-04-07
10. DOI 李旭,赵建昀,刘婷,鲁勇,张纪才
Growth of Semi-Polar (10(1)over-bar3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE[期刊论文]，MATERIALS，2021-04-01
11. DOI 赵建昀,李旭,刘婷,鲁勇,张纪才
First-principles study of the growth and diffusion of B and N atoms on the sapphire surface with h-BN as the buffer layer[期刊论文]，JOURNAL OF SEMICONDUCTORS，2021-03-27
12. DOI Li, Jinfeng,Li, Xu,鲁勇,Hu, Weiguo,张纪才
Effect of oxygen plasma modification on Pd/Al/Au Ohmic contacts on undoped AlN[期刊论文]，JOURNAL OF PHYSICS D-APPLIED PHYSICS，2019-12-11
13. DOI 孙茂松,李金峰,张纪才,孙文红
The fabrication of AlN by hydride vapor phase epitaxy[期刊论文]，Journal of Semiconductors，2019-11-24
14. DOI Cheng, Likun,Meng, Junhua,Pan, Xiaojun,鲁勇,Zhang, Xingwang,Gao, Menglei,Yin, Zhigang,Wang, Denggui,Wang, Ye,You, Jingbi,张纪才,Xie, Erqing
Two-dimensional hexagonal boron-carbon-nitrogen atomic layers[期刊论文]，NANOSCALE，2019-06-07
15. DOI Sha, Wei,张纪才,Tan, Shuxin,Luo, Xiangdong,Hu, Weiguo
III-nitride piezotronic/piezo-phototronic materials and devices[期刊论文]，JOURNAL OF PHYSICS D-APPLIED PHYSICS，2019-05-22
16. DOI Wang, Denggui,鲁勇,Meng, Junhua,Zhang, Xingwang,Yin, Zhigang,Gao, Menglei,Wang, Ye,Cheng, Likun,You, Jingbi,张纪才
Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride[期刊论文]，NANOSCALE，2019-05-21
17. DOI Hou, Ruixiang,Li, Lei,Fang, Xin,Zhao, Hui,Chen, Yihang,Xie, Ziang,Sun, Guosheng,Zhang, Xinhe,Zhao, Yanfei,Huang, Rong,Huang, Zengli,He, Youqin,Ma, Nongnong,张纪才,Xu, Wanjing,Yang, Jinbo,Xiao, Chijie,Qin, G. G.
Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion[期刊论文]，JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE，2019-01-01
18. DOI Tan, Shuxin,Deng, Xuguang,Zhang, Boshun,张纪才
Thermal stability of F ion-implant isolated AlGaN/GaN heterostructures[期刊论文]，SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY，2018-12-01
19. DOI Tan, Shuxin,张纪才,Egawa, Takashi,Chen, Gang
Influence of Quantum-Well Number and an AlN Electron Blocking Layer on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes[期刊论文]，APPLIED SCIENCES-BASEL，2018-12-01
20. DOI Tan, Shuxin,张纪才,Egawa, Takashi,Chen, Gang,Luo, Xiangdong,Sun, Ling,Zhu, Youhua
Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures[期刊论文]，NANOSCALE RESEARCH LETTERS，2018-10-23

[+][-]2020年之前

1. DOI Fan, Di,薛峰宁,赵智豪,Liu, Ting,鲁勇,张纪才
The adsorption and diffusion behaviors of nitrogen impurities in h-BN by first-principles study[期刊论文]，Materials Science in Semiconductor Processing，2023-02-01
2. DOI 尚成硕,何翔天,李晓迪,Liu, Zerui,Song, Yuxiang,张玉林,李旭,鲁勇,丁小康,刘婷,张纪才,徐福建
One 3D aerogel wearable pressure sensor with ultrahigh sensitivity, wide working range, low detection limit for voice recognition and physiological signal monitoring[期刊论文]，Science China Materials，2023-01-01
3. DOI Maosong, Sun,刘婷,鲁勇,Shuxin, Tan,李旭,张纪才,Wenhong, Sun
Influence of growth temperature and miscut angle of m-plane sapphire substrate on the semi-polar (11-22) AIN film grown by HVPE[期刊论文]，FRONTIERS IN PHYSICS，2022-11-23
4. DOI Zhang, Qian,Sun, Maosong,Yao, Mengqi,Zhu, Jie,Yang, Sudong,Chen, Lin,Sun, Baolong,张纪才,Hu, Wencheng,Zhao, Peng
Interfacial engineering of an FeOOH@Co3O4 heterojunction for efficient overall water splitting and electrocatalytic urea oxidation[期刊论文]，Journal of Colloid and Interface Science，2022-10-01
5. DOI 薛峰宁,赵智豪,Zhang, Yujuan,刘婷,鲁勇,张纪才
Layer-dependent electronic structure, dynamic stability, and phonon properties of few-layer SnSe[期刊论文]，Physical Review B，2022-09-01
6. DOI 赵智豪,薛峰宁,Zhao, Peng-Bo,鲁勇,张纪才
Theoretical study of potential n-type and p-type dopants in GaN from data mining and first-principles calculation[期刊论文]，Semiconductor Science and Technology，2022-08-01
7. DOI Yuefeng Zhang,Mengdi Li,Jie Fang,Dongdong Xia,Shengyong You,Chaowei Zhao,张纪才,李韦伟
Organic-Inorganic Hybrid Cathode Interlayer Materials for Efficient Organic Solar Cells[期刊论文]，Sustainable Energy & Fuels，2022-07-26
8. DOI 张骞,李旭,赵建昀,Sun, Zhifei,鲁勇,刘婷,张纪才
Effect of high-temperature nitridation and buffer layer on semi-polar (10–13) ALN grown on sapphire by HVPE[期刊论文]，Micromachines，2021-10-01
9. DOI 薛峰宁,Sun, Mao-song,Feng, Xiao-yue,鲁勇,张纪才
Electronic structure, dynamic stability, elastic, and optical properties of MgTMN2 (TM=Ti, Zr, Hf) ternary nitrides from first-principles calculations[期刊论文]，JOURNAL OF APPLIED PHYSICS，2021-04-07
10. DOI 李旭,赵建昀,刘婷,鲁勇,张纪才
Growth of Semi-Polar (10(1)over-bar3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE[期刊论文]，MATERIALS，2021-04-01
11. DOI 赵建昀,李旭,刘婷,鲁勇,张纪才
First-principles study of the growth and diffusion of B and N atoms on the sapphire surface with h-BN as the buffer layer[期刊论文]，JOURNAL OF SEMICONDUCTORS，2021-03-27
12. DOI Li, Jinfeng,Li, Xu,鲁勇,Hu, Weiguo,张纪才
Effect of oxygen plasma modification on Pd/Al/Au Ohmic contacts on undoped AlN[期刊论文]，JOURNAL OF PHYSICS D-APPLIED PHYSICS，2019-12-11
13. DOI 孙茂松,李金峰,张纪才,孙文红
The fabrication of AlN by hydride vapor phase epitaxy[期刊论文]，Journal of Semiconductors，2019-11-24
14. DOI Cheng, Likun,Meng, Junhua,Pan, Xiaojun,鲁勇,Zhang, Xingwang,Gao, Menglei,Yin, Zhigang,Wang, Denggui,Wang, Ye,You, Jingbi,张纪才,Xie, Erqing
Two-dimensional hexagonal boron-carbon-nitrogen atomic layers[期刊论文]，NANOSCALE，2019-06-07
15. DOI Sha, Wei,张纪才,Tan, Shuxin,Luo, Xiangdong,Hu, Weiguo
III-nitride piezotronic/piezo-phototronic materials and devices[期刊论文]，JOURNAL OF PHYSICS D-APPLIED PHYSICS，2019-05-22
16. DOI Wang, Denggui,鲁勇,Meng, Junhua,Zhang, Xingwang,Yin, Zhigang,Gao, Menglei,Wang, Ye,Cheng, Likun,You, Jingbi,张纪才
Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride[期刊论文]，NANOSCALE，2019-05-21
17. DOI Hou, Ruixiang,Li, Lei,Fang, Xin,Zhao, Hui,Chen, Yihang,Xie, Ziang,Sun, Guosheng,Zhang, Xinhe,Zhao, Yanfei,Huang, Rong,Huang, Zengli,He, Youqin,Ma, Nongnong,张纪才,Xu, Wanjing,Yang, Jinbo,Xiao, Chijie,Qin, G. G.
Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC with Very High Surface Concentrations Based on Plasma Stimulated Room-Temperature Diffusion[期刊论文]，JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE，2019-01-01
18. DOI Tan, Shuxin,Deng, Xuguang,Zhang, Boshun,张纪才
Thermal stability of F ion-implant isolated AlGaN/GaN heterostructures[期刊论文]，SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY，2018-12-01
19. DOI Tan, Shuxin,张纪才,Egawa, Takashi,Chen, Gang
Influence of Quantum-Well Number and an AlN Electron Blocking Layer on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes[期刊论文]，APPLIED SCIENCES-BASEL，2018-12-01
20. DOI Tan, Shuxin,张纪才,Egawa, Takashi,Chen, Gang,Luo, Xiangdong,Sun, Ling,Zhu, Youhua
Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures[期刊论文]，NANOSCALE RESEARCH LETTERS，2018-10-23

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