个人简介
研究方向：宽禁带半导体材料生长制备，包含高温CVD，VPE生长氮化铝、氮化镓单晶材料设备开发，工艺开发。
教育经历
| 入学时间 |
毕业时间 |
学位授予单位 |
学历 |
| 2019-09-01 |
2023-08-31 |
广西大学 |
博士研究生毕业 |
| 2013-09-01 |
2016-06-30 |
上海大学 |
硕士研究生毕业 |
| 2009-09-01 |
2013-06-30 |
河北工业大学城市学院 |
大学本科毕业 |
工作经历
| 起始年月 |
截止年月 |
所在单位名称 |
| 2016-07-01 |
2019-08-01 |
中科院苏州纳米所 |
| 2023-09-19 |
至今 |
北京化工大学 |
研究领域
研究方向：宽禁带半导体材料生长制备，包含高温CVD，VPE生长氮化铝、氮化镓单晶材料设备开发，工艺开发。
论文信息
[+][-]代表性论文
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1. DOI
刘婷,Fang, Chunlei,孙茂松,Chen, Minghao,Ji, Jianli,Shen, Zhijie,鲁勇,Tan, Shuxin,张纪才
2-inch semi-polar (11(2)over-bar2) AlN templates prepared by high-temperature hydride vapor phase epitaxy[期刊论文]，CRYSTENGCOMM，2024-06-24
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2. DOI
Ji, Jianli,刘婷,He, Zhuokun,Fang, Chunlei,Yan, Xuejun,Chen, Minghao,Shen, Zhijie,孙茂松,张纪才,Sun, Wenhong
Semipolar (11-22) AlN Films Grown by Hydride Vapor Phase Epitaxy for Schottky Barrier Diodes[期刊论文]，Crystal Growth and Design，2024-05-01
[+][-]
2024年
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1. DOI
刘婷,Fang, Chunlei,孙茂松,Chen, Minghao,Ji, Jianli,Shen, Zhijie,鲁勇,Tan, Shuxin,张纪才
2-inch semi-polar (11(2)over-bar2) AlN templates prepared by high-temperature hydride vapor phase epitaxy[期刊论文]，CRYSTENGCOMM，2024-06-24
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2. DOI
Ji, Jianli,刘婷,He, Zhuokun,Fang, Chunlei,Yan, Xuejun,Chen, Minghao,Shen, Zhijie,孙茂松,张纪才,Sun, Wenhong
Semipolar (11-22) AlN Films Grown by Hydride Vapor Phase Epitaxy for Schottky Barrier Diodes[期刊论文]，Crystal Growth and Design，2024-05-01
[+][-]
2023年
-
1. DOI
刘婷,Fang, Chunlei,孙茂松,Chen, Minghao,Ji, Jianli,Shen, Zhijie,鲁勇,Tan, Shuxin,张纪才
2-inch semi-polar (11(2)over-bar2) AlN templates prepared by high-temperature hydride vapor phase epitaxy[期刊论文]，CRYSTENGCOMM，2024-06-24
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2. DOI
Ji, Jianli,刘婷,He, Zhuokun,Fang, Chunlei,Yan, Xuejun,Chen, Minghao,Shen, Zhijie,孙茂松,张纪才,Sun, Wenhong
Semipolar (11-22) AlN Films Grown by Hydride Vapor Phase Epitaxy for Schottky Barrier Diodes[期刊论文]，Crystal Growth and Design，2024-05-01
[+][-]2022年
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1. DOI
刘婷,Fang, Chunlei,孙茂松,Chen, Minghao,Ji, Jianli,Shen, Zhijie,鲁勇,Tan, Shuxin,张纪才
2-inch semi-polar (11(2)over-bar2) AlN templates prepared by high-temperature hydride vapor phase epitaxy[期刊论文]，CRYSTENGCOMM，2024-06-24
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2. DOI
Ji, Jianli,刘婷,He, Zhuokun,Fang, Chunlei,Yan, Xuejun,Chen, Minghao,Shen, Zhijie,孙茂松,张纪才,Sun, Wenhong
Semipolar (11-22) AlN Films Grown by Hydride Vapor Phase Epitaxy for Schottky Barrier Diodes[期刊论文]，Crystal Growth and Design，2024-05-01
[+][-]2021年
-
1. DOI
刘婷,Fang, Chunlei,孙茂松,Chen, Minghao,Ji, Jianli,Shen, Zhijie,鲁勇,Tan, Shuxin,张纪才
2-inch semi-polar (11(2)over-bar2) AlN templates prepared by high-temperature hydride vapor phase epitaxy[期刊论文]，CRYSTENGCOMM，2024-06-24
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2. DOI
Ji, Jianli,刘婷,He, Zhuokun,Fang, Chunlei,Yan, Xuejun,Chen, Minghao,Shen, Zhijie,孙茂松,张纪才,Sun, Wenhong
Semipolar (11-22) AlN Films Grown by Hydride Vapor Phase Epitaxy for Schottky Barrier Diodes[期刊论文]，Crystal Growth and Design，2024-05-01
[+][-]2020年
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1. DOI
刘婷,Fang, Chunlei,孙茂松,Chen, Minghao,Ji, Jianli,Shen, Zhijie,鲁勇,Tan, Shuxin,张纪才
2-inch semi-polar (11(2)over-bar2) AlN templates prepared by high-temperature hydride vapor phase epitaxy[期刊论文]，CRYSTENGCOMM，2024-06-24
-
2. DOI
Ji, Jianli,刘婷,He, Zhuokun,Fang, Chunlei,Yan, Xuejun,Chen, Minghao,Shen, Zhijie,孙茂松,张纪才,Sun, Wenhong
Semipolar (11-22) AlN Films Grown by Hydride Vapor Phase Epitaxy for Schottky Barrier Diodes[期刊论文]，Crystal Growth and Design，2024-05-01
[+][-]2020年之前
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1. DOI
刘婷,Fang, Chunlei,孙茂松,Chen, Minghao,Ji, Jianli,Shen, Zhijie,鲁勇,Tan, Shuxin,张纪才
2-inch semi-polar (11(2)over-bar2) AlN templates prepared by high-temperature hydride vapor phase epitaxy[期刊论文]，CRYSTENGCOMM，2024-06-24
-
2. DOI
Ji, Jianli,刘婷,He, Zhuokun,Fang, Chunlei,Yan, Xuejun,Chen, Minghao,Shen, Zhijie,孙茂松,张纪才,Sun, Wenhong
Semipolar (11-22) AlN Films Grown by Hydride Vapor Phase Epitaxy for Schottky Barrier Diodes[期刊论文]，Crystal Growth and Design，2024-05-01
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